Low temperature impurity doping of silicon carbide

Details Low temperature impurity doping of silicon carbide Low temperature impurity doping of silicon carbide

2011-08-16

2011-08-16

Smith, Zandra (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Specified wide band gap semiconductor material other than...

Diamond or silicon carbide

C257SE21056, C257S607000, C438S560000, C438S563000

Reexamination Certificate

active

07999268

ABSTRACT:
The method described herein enables the introduction of external impurities into Silicon Carbide (SiC) to be conducted at a temperature between 1150-1400° C. Advantages include: a) low temperature diffusion procedure with greater control of the doping process, b) prevent roughness of SiC surface, c) less surface defects and d) better device performance and higher yield. The method described herein involves depositing a ceramic layer that contains the desired impurity and a certain element such as oxygen (in the form of oxide), or other elements/compounds that draw out the silicon and carbon atoms from the surface region of the SiC leaving behind carbon and silicon vacancies which then allow the external impurity to diffuse into the SiC more easily. In another embodiment, the deposited layer also has carbon atoms that discourage carbon from escaping from the SiC, thus generating a surface region of excess carbon in addition to the silicon vacancies.

REFERENCES:
patent: 5770469 (1998-06-01), Uram et al.
patent: 6221704 (2001-04-01), Furukawa et al.
patent: 6300228 (2001-10-01), Adkisson et al.
patent: 6806173 (2004-10-01), Spitz et al.

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