Low temperature, high pressure silicon deposition method

Details Low temperature, high pressure silicon deposition method Low temperature, high pressure silicon deposition method

1995-05-18

1997-03-25

King, Roy V.

Coating processes

Coating by vapor, gas, or smoke

4272551, 4272552, 437101, 148DIG1, C23C 1600

Patent

active

056142579

ABSTRACT:
A method of producing amorphous silicon layers on a substrate by chemical vapor deposition at elevated pressures of at least about 25 Torr whereby deposition occurs at practicable rates. A substrate is loaded in a vacuum chamber, the temperature adjusted to obtain an amorphous silicon deposit of predetermined microcrystalline density, and the silicon precursor gases fed to the chamber to a preselected high pressure. Doped amorphous silicon films also can be deposited at high deposition rates. The above amorphous silicon films have a low density of nucleation sites; thus when the films are annealed, polycrystalline films having large crystal grains are produced.

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