Low temperature hermetic sealing method having passivation...

Details Low temperature hermetic sealing method having passivation... Low temperature hermetic sealing method having passivation...

2006-06-27

2006-06-27

Chang, Richard (Department: 3729)

Metal working

Method of mechanical manufacture

Electrical device making

C029S412000, C029S415000, C029S592100, C029S832000, C029S840000, C174S250000, C361S748000, C438S108000, C438S125000, C438S126000, C083S929100

Reexamination Certificate

active

07065867

ABSTRACT:
A hermetic sealing method, which is capable of preventing oxidation of a micro-electromechanical system (MEMS) and sealing the MEMS at a low temperature. A low temperature hermetic sealing method having a passivation layer includes depositing a junction layer, a wetting layer, and a solder layer on a prepared lid frame, depositing a first protection layer for preventing oxidation on the solder layer and forming a lid, preparing a package base on which a device is disposed, and in which a metal layer and a second protection layer are formed around the device, and assembling the lid and the package base, heating, and sealing them. The protection layer is laminated on the solder layer that is formed by the lid, thereby preventing oxidation without using a flux. The low temperature hermetic sealing method having a passivation layer is suitable for sealing a device, such as the MEMS, which is sensitive to heat, water and other by-products.

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Korean Patent Office Action dated Dec. 29, 2003.

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