Low-temperature-grown (LTG) insulated-gate PHEMT device and...

Details Low-temperature-grown (LTG) insulated-gate PHEMT device and... Low-temperature-grown (LTG) insulated-gate PHEMT device and...

2005-12-01

2010-11-30

Vu, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

C257S194000, C257SE29246, C257SE21403, C257SE21407

Reexamination Certificate

active

07842972

ABSTRACT:
A pseudomorphic-high-electron-mobility-transistor (PHEMT) includes a substrate, a low-temperature-grown (LTG) GaAs gate-insulator layer disposed on the substrate, and a gate electrode disposed on the gate-insulator layer.

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Actis, R., et al., “Insulated-gate PHEMT Awitching Devices Fabricated With A Low-Temperature-Grown (LTG) GaAs Gate Insulator,” GOMACTech-05, pp. 403-406, Apr. 2005 (4 pages).

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