Low temperature grown layers with migration enhanced epitaxy...

Coherent light generators – Particular active media – Semiconductor

Reexamination Certificate

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C372S045010

Reexamination Certificate

active

11079148

ABSTRACT:
A laser system having migration enhanced epitaxy grown substantially flat layers proximate to quantum wells of an active region. The flat layers may be grown at low temperature. This growth may result in flatter interfaces in the nitrogen containing quantum wells within the active region as well as lower trap densities in adjacent material. This may achieve a reduced trap density as well as reduced segregation resulting in a spectral luminescence profile revealing a single narrow peak with a high level of photoluminescence.

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