Low temperature germanium-silicon on insulator thin-film transis

Details Low temperature germanium-silicon on insulator thin-film transis Low temperature germanium-silicon on insulator thin-film transis

1991-03-01

1993-10-05

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Field effect device in non-single crystal, or...

257 70, 257412, 257616, H01L 2904, H01L 27108, H01L 2976, H01L 31117

Patent

active

052508188

ABSTRACT:
MOS transistors are formed in thin films of Ge/Si alloys (Ge.sub.x Si.sub.1-x). According to the process of the present invention, polycrystalline films of Ge/Si are deposited using commercially-available LPCVD equipment, which in the preferred process uses silane and germane as the sources of Ge and Si. The deposited Ge.sub.x Si.sub.1-x films are polycrystalline at temperatures for processing down to as below 400.degree. C., and the films can be doped heavily by ion implantation and annealing at temperatures as low as 600.degree. C. to give high mobility and dopant activation yielding very low resistivity. By carrying out the annealing step in the formation of the thin film transistors in the temperature range of 400.degree. to 500.degree. C., the films provide very large grain size, minimizing the impact of grain boundaries in the polycrystalline films where the thin film transistors are to be formed. As a result, thin film MOS transistors are fabricated at temperatures below 500.degree. C., and as low as 400.degree. C., by using Ge.sub.x Si.sub.1-x deposition and doping technology. The resulting transistors have significantly improved electrical characteristics compared to thin film transistors fabricated in silicon films utilizing standard processing techniques.

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patent: 4673957 (1987-06-01), Ovshinsky et al.
patent: 5057889 (1991-10-01), Yamada et al.
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