Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Patent
1996-08-26
1999-05-04
Saadat, Mahshid
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
257779, 257706, H01L 2348, H01L 2352, H01L 2940
Patent
active
059006730
ABSTRACT:
A low-temperature fusing brazing material containing 10-70% by weight of silver, 10-75% by weight of antimony, 10-50% by weight of indium and/or tin and 0-15% by weight of copper, and wiring boards and semiconductor device-housing packages assembled with the foregoing brazing material.
REFERENCES:
patent: 4872047 (1989-10-01), Fister et al.
patent: 5049972 (1991-09-01), Uda et al.
patent: 5550407 (1996-08-01), Ogashiwa
Nishi Koji
Watanabe Osamu
Clark S. V.
Kyocera Corporation
Saadat Mahshid
Tokuriki Honten Co. Ltd.
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