Low-temperature formation method for emitter tip including...

Details Low-temperature formation method for emitter tip including... Low-temperature formation method for emitter tip including...

2006-05-09

2006-05-09

Nguyen, Tuan H. (Department: 2813)

Semiconductor device manufacturing: process

Electron emitter manufacture

C445S024000

Reexamination Certificate

active

07041518

ABSTRACT:
Provided are a low-temperature formation method for emitter tips including copper oxide nanowires or copper nanowires and a display device or a light source manufactured using the same. The low-temperature formation method includes preparing a substrate having an exposed copper surface. The copper surface contacts an oxide solution at a low temperature of 100° C. or less to grow copper oxide nanowires on the surface of the substrate. Optionally, a reduction gas or a heat is supplied to the copper oxide nanowires, or plasma processing is performed on the copper oxide nanowires, thereby reducing the copper oxide nanowires to copper nanowires. Thus, emitter tips including copper oxide nanowires or copper nanowires are formed densely at a low temperature such that the emitter tips have a shape and length suitable for emission of electrons.

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PCT International Search Report for Lee, et al., Int'l Application No. PCT/KR2003/002829, Filed Dec. 24, 2003, Dated Mar. 30, 2004.

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