Low temperature elevated pressure glass flow/re-flow process

Coating processes – Electrical product produced – Condenser or capacitor

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156644, 156662, 156663, 427 93, 4273762, H01L 21316

Patent

active

044205031

ABSTRACT:
A method of reducing the time and temperature for either flowing or re-flowing a glass layer on a semiconductor device is described. The method involves conducting the flow or re-flow process steps at an elevated pressure which reduces both the time and the temperature required to achieve proper flow and re-flow characteristics.

REFERENCES:
patent: 3481781 (1969-12-01), Kern
patent: 3833919 (1974-09-01), Naber
patent: 3925572 (1975-12-01), Naber
patent: 4167915 (1979-09-01), Toole et al.
patent: 4268538 (1981-05-01), Toole et al.
patent: 4271582 (1981-06-01), Shieai
patent: 4273805 (1981-06-01), Dawson
patent: 4275093 (1981-06-01), Sasaki et al.
patent: 4293589 (1981-10-01), Tagaki et al.
patent: 4293590 (1981-10-01), Tagaki et al.
patent: 4349584 (1982-09-01), Flatley
patent: 4355454 (1982-10-01), Tasch
patent: 4363830 (1982-12-01), Hsw
W. Kern, et al., "Chemical Vapor Deposition of Silicate Glasses For Use With Silicon Devices," J. Electrochem. Soc.: Electrochemical Technology, 117, Apr. 1970 (I-Deposition Techniques, pp. 562-568) and (II-Film Properties, pp. 568-573).

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