Low temperature dry process for stripping photoresist after high

Details Low temperature dry process for stripping photoresist after high Low temperature dry process for stripping photoresist after high

1997-01-03

1998-09-22

Breneman, R. Bruce

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

216 16, 430329, 20419236, H01L 21461

Patent

active

058113584

ABSTRACT:
A dry process for stripping photoresist from a semiconductor device during the manufacturing process and after high dose ion implantation is describe. The implant-hardened surface of the photoresist is first stripped by oxygen and nitrogen/hydrogen plasma at a lower temperature (<220.degree. C.) to prevent popping problem. The bulk body of the photoresist is then stripped by oxygen and nitrogen/hydrogen plasma at a higher temperature (>220.degree. C.) to provide a faster reaction rate. The semiconductor wafer is cleaned by ammonium hydroxide and hydrogen peroxide to completely remove remaining contaminant and photoresist residuals. The three-step dry process can effectively strip the post implant photoresist so that it ensures the cleanliness of the wafer for the succeeding processes.

REFERENCES:
patent: 4350563 (1982-09-01), Takada et al.
patent: 4961820 (1990-10-01), Shinagawa
patent: 5160404 (1992-11-01), Motoyama
patent: 5628871 (1997-05-01), Shinagawa et al.

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