Low-temperature direct nitridation of silicon in nitrogen plasma

Details Low-temperature direct nitridation of silicon in nitrogen plasma Low-temperature direct nitridation of silicon in nitrogen plasma

1986-05-05

1987-12-29

Niebling, John F.

Chemistry: electrical and wave energy

Processes and products

Electrostatic field or electrical discharge

20419222, 427 38, 427 451, 437241, C23C 824

Patent

active

047159375

ABSTRACT:
A process utilizing a microwave discharge technique for performing direct nitridation of silicon at a relatively low growth temperature of no more than about 500.degree. C. in a nitrogen plasma ambient without the presence of hydrogen or a fluorine-containing species. Nitrogen is introduced through a quartz tube. A silicon rod connected to a voltage source is placed in the quartz tube and functions as an anodization electrode. The silicon wafer to be treated is connected to a second voltage source and functions as the second electrode of the anodizing circuit. A small DC voltage is applied to the silicon wafer to make the plasma current at the wafer and the silicon rod equal and minimize contamination of the film.

REFERENCES:
patent: 4277320 (1981-07-01), Beguwala et al.
patent: 4298629 (1981-11-01), Nozaki et al.

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