Low temperature deposition utilizing organometallic compounds

Details Low temperature deposition utilizing organometallic compounds Low temperature deposition utilizing organometallic compounds

1986-07-28

1988-01-12

Smith, John D.

Fishing, trapping, and vermin destroying

156613, H01L 21365

Patent

active

047191244

ABSTRACT:
It has been found that deposition temperature for materials such as cadmium mercury telluride is significantly lowered by precracking selected precursor materials. For example, if organometallic compounds such as diethylmercury and diethyltellurium are decomposed before introduction in the deposition vapor, epitaxial layer formation is possible at 250.degree. C.

REFERENCES:
patent: 4116733 (1978-09-01), Olsen
patent: 4468283 (1984-08-01), Ahmed
patent: 4566918 (1986-01-01), Irvine
"The Growth of Cd.sub.x Hg.sub.1-x Te Using Organometallics", by J. B. Mullin and S. J. C. Irvine, Journal of Vacuum Science and Technology, vol. 21, No. 1, (May/Jun. 1982) pp. 178-181.

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