Low temperature deposition of silicon oxides for device fabricat

Coating processes – Electrical product produced – Integrated circuit – printed circuit – or circuit board

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427 51, B05D 314

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active

047088842

ABSTRACT:
Conformal layers of a silicon oxide, such as silicon dioxide, are deposited at temperatures below 600 degrees C. through the decomposition of compounds such as diacetoxyditertiarybutoxysilane. The required temperatures do not significantly affect temperature-sensitive structures. Therefore, it is possible to form silicon oxide regions in the processing of devices having these structures. More generally, lowered-temperature processing can be applied to the deposition of other materials which include silicon oxide. For example, borophosphosilicate glasses can be deposited by chemical vapor deposition processing involving flash-evaporation of a mixture of liquid precursor reagents.

REFERENCES:
patent: 2566956 (1951-09-01), Pedlow et al.
patent: 3655438 (1972-04-01), Sterling et al.
patent: 4597985 (1986-07-01), Chandross et al.

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