Low temperature deposition of silicon oxides for device fabricat

Details Low temperature deposition of silicon oxides for device fabricat Low temperature deposition of silicon oxides for device fabricat

1985-04-15

1986-07-01

Pianalto, Bernard D.

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

427 51, B05D 314

Patent

active

045979855

ABSTRACT:
Conformal layers of a silicon oxide, such as silicon dioxide, are deposited at temperatures below 600 degrees C. through the decomposition of compounds such as diacetoxyditertiarybutoxysilane. The required temperatures do not significantly affect temperature-sensitive structures. Therefore, it is possible to form silicon oxide regions in the processing of devices having these structures.

REFERENCES:
patent: 2566956 (1951-09-01), Pedlow et al.
patent: 3655438 (1972-04-01), Sterling et al.

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