Low temperature deposition of silicon oxides for device fabricat

Fishing – trapping – and vermin destroying

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437235, 427574, 427579, H01L 2102

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056438389

ABSTRACT:
The use of a deposition process involving a plasma struck in a gas including tetraethoxysilane and a source of oxygen yields, at low temperatures, conformal coatings of silicon dioxide. This process has significant implications for semiconductor device fabrication involving the deposition of a dielectric over a metallic non-planar structure.

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