Coating processes – Coating by vapor – gas – or smoke – Mixture of vapors or gases utilized
Patent
1996-07-11
1998-04-28
King, Roy V.
Coating processes
Coating by vapor, gas, or smoke
Mixture of vapors or gases utilized
4272552, 4272551, 427255, 427314, C23C 1640
Patent
active
057441960
ABSTRACT:
The present invention is a process for very low temperature chemical vapor deposition of silicon dioxide, comprising the steps of
REFERENCES:
patent: 4900591 (1990-02-01), Bennett et al.
patent: 4923716 (1990-05-01), Brown et al.
patent: 4981724 (1991-01-01), Hochberg et al.
patent: 5190890 (1993-03-01), Precht et al.
patent: 5204141 (1993-04-01), Roberts et al.
patent: 5455367 (1995-10-01), Klein et al.
Handbook of Thin Film Technology, Maissell, Leon I. and Glang, Reinhard, editors McGraw Hill Book Company, New York, (1970). No Page Number.
"Silicon Processing for the VLSI Era," Wolf, Stanley, and Tauber, Richard N., editors, Lattice Press, Sunset Beach, California, pp. 182-191,(1986).
A. K. Hochberg and D. A. Roberts, Mat. Res. Soc. Symp. Proc. vol. 282, pp. 569-574, (1993), Material Research Society.
A. K. Hochberg and D. L. O'Meara, J. Electrochem. Soc., vol. 136, pp. 1843-1844, (1989).
Bennet, B. R., et al. Appl. Phys. Lett. 50(4), pp. 197-199, (1987).
Chapple-Sokol, J. D., Gordon, R. G., Thin Solid Films, 171, (1989) pp. 291-305.
Barry Gelernt, Semiconductor International, "Selecting an Organosilicon Source for LPCVD Oxide," Cahners Publishing Co., Mar. 1990. No Page Number .
Hochberg Arthur Kenneth
Laxman Ravi Kumar
Air Products and Chemicals Inc.
Chase Geoffrey L.
King Roy V.
LandOfFree
Low temperature deposition of silicon dioxide using organosilane does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Low temperature deposition of silicon dioxide using organosilane, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Low temperature deposition of silicon dioxide using organosilane will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1530206