Low temperature deposition of silicon dioxide using organosilane

Coating processes – Coating by vapor – gas – or smoke – Mixture of vapors or gases utilized

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Details

4272552, 4272551, 427255, 427314, C23C 1640

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active

057441960

ABSTRACT:
The present invention is a process for very low temperature chemical vapor deposition of silicon dioxide, comprising the steps of

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Barry Gelernt, Semiconductor International, "Selecting an Organosilicon Source for LPCVD Oxide," Cahners Publishing Co., Mar. 1990. No Page Number .

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