Semiconductor device manufacturing: process – Having magnetic or ferroelectric component
Reexamination Certificate
2006-06-20
2006-06-20
Lee, Hsien-Ming (Department: 2823)
Semiconductor device manufacturing: process
Having magnetic or ferroelectric component
C438S240000, C204S298120, C204S298260
Reexamination Certificate
active
07063984
ABSTRACT:
A memory fabrication apparatus includes a pair of targets arranged so as to be spaced apart from one another within a closed vacuum vessel, each target of said pair of targets having a sputtering surface facing the sputtering surface of the other target of said pair of targets; and substrate holder adapted to receive facing target sputtering a CMO material on an electrode.
REFERENCES:
patent: 5310990 (1994-05-01), Russell et al.
patent: 5667650 (1997-09-01), Face
patent: 6077406 (2000-06-01), Kawakubo et al.
patent: 6204139 (2001-03-01), Liu et al.
patent: 6294420 (2001-09-01), Tsu et al.
patent: 6498097 (2002-12-01), Park et al.
patent: 6533906 (2003-03-01), Kawakubo et al.
patent: 6537830 (2003-03-01), Arita et al.
patent: 6674110 (2004-01-01), Gnadinger
patent: 6693821 (2004-02-01), Hsu et al.
patent: 6815744 (2004-11-01), Beck et al.
patent: 2003/0148565 (2003-08-01), Yamanaka
patent: 2004/0160818 (2004-08-01), Rinerson et al.
Liu, et al., Electric-pulse-induced reversible resistance change effect in magnetoresistive films. Applied Physics Letters vol. 76, No. 19, May 8, 2000.
Liu et al., A New Concept for Non-Volatile Memory: The Electric-Pulse Induced Resistive Change Effect in Colossal Magnetoresistive Thin Films, NVMTS Nov. 7, 2001.
Beck et al., Reproducible switching effect in thin Oxide films for memory applications. Applied Physics Letters vol. 77, No. 1, Jul. 3, 2000.
Watanable et al., Current-driven insulator-conductor transistion and nonvolatile memory in Chromium-doped SrTiO3 single Crystals. Applied Physics Letters vol. 78, No. 23, Jun. 4, 2001.
Rossel et al., Electric Current distribution across a metal-insulator-metal structure during bistable switching. Journal of Applied Physics vol. 90, No. 6. Sep. 15, 2001.
Product Brochure from Japan Steel Works.
Westerheim et al., Relation between electrical properties and microstructure of YBaCuO thin films deposited by single-target off-axis sputtering, J. Appl. Phys. 750, Jan. 1, 1994.
Rao et al., Uniform deposition of YbaCuO thin films over an 8-inch diameter area by a 90 deg. Off-axis sputtering technique, Appl. Phys. Lett. 69(25), Dec. 16, 1996.
Inoue, et al., Sputtering Process Design of PZT capacitors for stable FeRAM operation, IEEE 1998.
Li et al., Preferred orientation and ferroelectric properties of lead zirconate titanate thin films, Thin Solid Films 375 (2000) 91-94.
Li et al., Chacterization of lead zirconate titante thin films deposited at low temperature by reactive facing target sputtering. Thin Solid Films 375 (2000) 267-270.
Li et al., Preparation and characterization of highly oriented Pb(Zr, Ti)O3 thin films with seeding titanium layer deposited at low temperature by facing target sputtering. Vacuum 59 (2000) 800-805.
Inoue et al., Low thermal-budget fabrication of sputtered PZT capacitor on multilevel interconnects for embedded FeRAM, IEEE 2000.
Lung et al., Low Temperature Epitaxial Growth of PZT on Conductive Perovskite LaNiO3 electrode for embedded capacitor over interconnect (COI) FeRAM application, IEEE 2001.
Seol et al., Low temperature crystallization induced by excimer laser irradiation of SrBi2Ta2O9 films, Materials Research Society 2001.
Hsia Steve K.
Matheny Larry
Nagashima Makoto
Rinerson Darrell
Lee Hsien-Ming
Unity Semiconductor Corporation
LandOfFree
Low temperature deposition of complex metal oxides (CMO)... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Low temperature deposition of complex metal oxides (CMO)..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Low temperature deposition of complex metal oxides (CMO)... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3631876