Low temperature-deposited passivation film over semiconductor de

Details Low temperature-deposited passivation film over semiconductor de Low temperature-deposited passivation film over semiconductor de

1997-02-19

1999-05-11

Monin, Jr., Donald L.

Active solid-state devices (e.g., transistors, solid-state diode

With means to control surface effects

Insulating coating

257646, 257 57, 438763, 438786, H01L23/58

Patent

active

059030470

ABSTRACT:
The present invention provides a composite passivation film deposited at low temperatures (<150.degree. C.). A hydrogenated amorphous silicon nitride (a-SiN.sub.x :H) film is formed over a semiconductor device. Then a very thin layer (>6.4 nm) of an amorphous silicon hydrogen (a-Si:H) film is formed over the a-SiN.sub.x :H film. Such a composite passivation film can prevent semiconductor devices from oxidation due to percolation of moisture, and maintain the electric properties and stability of the semiconductor devices.

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patent: 5075244 (1991-12-01), Sakai et al.
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patent: 5525813 (1996-06-01), Miyake et al.

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