Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Responsive to electromagnetic radiation
Reexamination Certificate
2005-07-29
2008-11-04
Ghyka, Alexander G (Department: 2812)
Semiconductor device manufacturing: process
Making device or circuit responsive to nonelectrical signal
Responsive to electromagnetic radiation
C438S149000, C438S780000, C438S781000, C257SE21261, C257SE21264, C257SE21271
Reexamination Certificate
active
07445953
ABSTRACT:
The invention relates to low temperature curable spin-on glass materials which are useful for electronic applications, such as optical devices. A substantially crack-free and substantially void-free silicon polymer film is produced by (a) preparing a composition comprising at least one silicon containing pre-polymer, a catalyst, and optionally water; (b) coating a substrate with the composition to form a film on the substrate, (c) crosslinking the composition by heating to produce a substantially crack-free and substantially void-free silicon polymer film, having a a transparency to light in the range of about 400 nm to about 800 nm of about 95% or more.
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Apen Paul G.
Chen Jinghong
Jin Lei
Lu Victor
Smith Peter Alfred
Ghyka Alexander G
Honeywell International , Inc.
Roberts & Roberts, LLP
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