Low temperature curable materials for optical applications

Details Low temperature curable materials for optical applications Low temperature curable materials for optical applications

2006-03-21

2006-03-21

Smith, Matthew (Department: 2823)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S424000, C427S255180, C427S255270

Reexamination Certificate

active

07015061

ABSTRACT:
The invention relates to low temperature curable spin-on glass materials which are useful for electronic applications, such as optical devices. A substantially crack-free and substantially void-free silicon polymer film is produced by (a) preparing a composition comprising at least one silicon containing pre-polymer having at least one organic group, a catalyst, and optionally water; (b) coating a substrate with the composition to form a film on the substrate, (c) crosslinking the composition by heating the composition at a temperature of about 250° C. or less for about 30 minutes or less, to produce a substantially crack-free and substantially void-free silicon polymer film, which silicon polymer has a weight ratio of organic groups to SiO groups of about 0.15:1 or more, and which silicon containing polymer film has a field breakdown voltage of about 2.5 MV/cm or more and a transparency to light in the range of about 400 nm to about 700 nm of about 95% or more.

REFERENCES:
patent: 3294737 (1966-12-01), Krantz
patent: 6674106 (2004-01-01), Tanaka et al.
patent: 2001/0024685 (2001-09-01), Boulton et al.
patent: 2002/0074625 (2002-06-01), Wang et al.
patent: 2005/0096408 (2005-05-01), Wakamura

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