Low temperature crystallization and pattering of amorphous silic

Details Low temperature crystallization and pattering of amorphous silic Low temperature crystallization and pattering of amorphous silic

1990-08-06

1992-09-15

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437967, 437973, 156603, H01L 21324

Patent

active

051478269

ABSTRACT:
The 700.degree. C./4 min. rapid thermal anneal described in the prior art for converting amorphous Si to polycrystalline Si can be reduced to a temperature range of from 550.degree. C. to 650.degree. C. This is accomplished by depositing a very thin discontinuous film of a nucleating site forming material over the amorphous Si prior to rapid thermal anneal. Furthermore, by selectively depositing the material in a pattern, only that amorphous Si beneath the deposited pattern is caused to crystallize during annealing, while the remaining areas of amorphous Si remain in the amorphous state.

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