Low temperature CMOS/SOS process using dry pressure oxidation

Details Low temperature CMOS/SOS process using dry pressure oxidation Low temperature CMOS/SOS process using dry pressure oxidation

1978-04-10

1979-12-25

Tupman, W. C.

Metal working

Method of mechanical manufacture

Assembling or joining

29576B, 29578, 29590, 148 15, 204192E, B01J 1700

Patent

active

041797922

ABSTRACT:
An enhancement type, self-aligned silicon gate complementary metal oxide semiconductor (CMOS)/silicon on sapphire (SOS) structure is made by generating all gate oxides and oxide isolated regions with dry oxygen at pressures above 1 atmosphere and at temperatures of 800.degree. C. to 825.degree. C. using ion implantation for all doping operations and plasma definition of all masking dielectrics.

REFERENCES:
patent: 3590471 (1971-07-01), Lepselter
patent: 4117301 (1978-09-01), Goel
Electrochem. Soc.: Solid-State Science & Technology, "Dry Pressure Local dation of Silicon for IC Isolation", by Marshall et al., Oct. 1975, pp. 1411 & 1412.
Electrochem. Soc.: Solid-State Science & Technology, "Low Temp. Thermal Oxidation of Silicon by Dry Oxygen Pressure above 1 Atm", by Zeto et al., Oct. 1975, pp. 1409 & 1410.

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