Low temperature chemical vapor deposition of silicon dioxide fil

Details Low temperature chemical vapor deposition of silicon dioxide fil Low temperature chemical vapor deposition of silicon dioxide fil

1987-06-29

1989-07-04

Hearn, Brian E.

Fishing, trapping, and vermin destroying

148DIG118, 4272553, 423337, 437240, H01L 21316

Patent

active

048450545

ABSTRACT:
A method for low temperature chemical vapor deposition of an SiO.sub.2 based film on a semiconductor structure using selected alkoxysilanes, in particular tetramethoxysilane, trimethoxysilane and triethoxysilane which decompose pyrolytically at lower temperatures than TEOS (tetraethoxysilanes). Ozone is introduced into the reaction chamber to increase deposition rates, lower reaction temperatures and provide a better quality SiO.sub.2 film by generating a more complete oxidation. Ozone is also employed as a reactant for doping SiO.sub.2 based films with oxides of phosphorus and boron.

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