Low temperature chemical mechanical polishing of dielectric mate

Details Low temperature chemical mechanical polishing of dielectric mate Low temperature chemical mechanical polishing of dielectric mate

1997-12-29

2000-09-19

Gulakowski, Randy

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

216 89, 451 7, B24B 4914, B44C 122, H01L 21302

Patent

active

061211443

ABSTRACT:
The present invention is an improved apparatus and process for chemical mechanical polishing layers which have a low dielectric constant (K). The present invention lowers the temperature of the material having a low dielectric constant and then polishes that material at the lower temperature. By lowering the temperature of the low K material the hardness or stiffness of the material is improved making it easier to polish and resulting in a more planar surface.

REFERENCES:
patent: 4450652 (1984-05-01), Walsh
patent: 5476817 (1995-12-01), Numata
patent: 5851846 (1998-12-01), Matsui et al.

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