Radiant energy – Photocells; circuits and apparatus – Photocell controlled circuit
Patent
1997-11-12
1999-09-14
Le, Que T.
Radiant energy
Photocells; circuits and apparatus
Photocell controlled circuit
25037008, H01J 4014
Patent
active
059526467
ABSTRACT:
A semiconductor imaging device, for use, for example, in medical diagnosis and non-destructive testing, includes a radiation detector semiconductor substrate and a readout substrate connected to the detector by means of low temperature solder bumps A low temperature solder is preferably a lead-tin based solder having a melting point below that of eutectic lead-tin solder. Preferred embodiments of such low temperature solder include bismuth based alloys such as, for example, the eutectic (52 wt-%Bi, 32 wt-%Pb, 16 wt-%Sn) alloy which has a melting point under 100.degree. C.
REFERENCES:
patent: 4912545 (1990-03-01), Go
patent: 5043582 (1991-08-01), Cox et al.
patent: 5245191 (1993-09-01), Barber et al.
patent: 5619040 (1997-04-01), Shapiro et al.
(1-Page Document) Abstract for JP 63-28445 A, "Radiation Image Receiving Device," Nov. 21, 1998.
Salonen Jaakko
Spartiotis Konstantinos Evangelos
Le Que T.
Simage Oy
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