Low temperature amorphous silicon sacrificial layer for...

Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Including integrally formed optical element

Reexamination Certificate

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C438S050000, C257SE21536

Reexamination Certificate

active

07851239

ABSTRACT:
Methods of fabricating an electromechanical systems device that mitigate permanent adhesion, or stiction, of the moveable components of the device are provided. The methods provide an amorphous silicon sacrificial layer with improved and reproducible surface roughness. The amorphous silicon sacrificial layers further exhibit excellent adhesion to common materials used in electromechanical systems devices.

REFERENCES:
patent: 5061049 (1991-10-01), Hornbeck
patent: 5096279 (1992-03-01), Hornbeck et al.
patent: 5331454 (1994-07-01), Hornbeck
patent: 5411769 (1995-05-01), Hornbeck
patent: 5459610 (1995-10-01), Bloom et al.
patent: 5578976 (1996-11-01), Yao
patent: 5602671 (1997-02-01), Hornbeck
patent: 5610438 (1997-03-01), Wallace et al.
patent: 5665997 (1997-09-01), Weaver et al.
patent: 5824608 (1998-10-01), Gotoh et al.
patent: 5978127 (1999-11-01), Berg
patent: 6040937 (2000-03-01), Miles
patent: 6046840 (2000-04-01), Huibers
patent: 6099132 (2000-08-01), Kaeriyama
patent: 6172797 (2001-01-01), Huibers
patent: 6608268 (2003-08-01), Goldsmith
patent: 6624944 (2003-09-01), Wallace et al.
patent: 6635919 (2003-10-01), Melendez et al.
patent: 6674562 (2004-01-01), Miles
patent: 6710908 (2004-03-01), Miles et al.
patent: 6787968 (2004-09-01), Tai et al.
patent: 6791441 (2004-09-01), Pillans et al.
patent: 6969635 (2005-11-01), Patel et al.
patent: 7002441 (2006-02-01), Pillans et al.
patent: 7123216 (2006-10-01), Miles
patent: 7327510 (2008-02-01), Cummings et al.
patent: 7417784 (2008-08-01), Sasagawa et al.
patent: 2003/0214639 (2003-11-01), Patel et al.
patent: 2003/0231373 (2003-12-01), Kowarz et al.
patent: 2004/0051929 (2004-03-01), Sampsell et al.
patent: 2004/0100677 (2004-05-01), Huibers et al.
patent: 2004/0150939 (2004-08-01), Huff
patent: 2004/0217919 (2004-11-01), Pichl et al.
patent: 2005/0012577 (2005-01-01), Pillans et al.
patent: 2005/0012975 (2005-01-01), George et al.
patent: 2006/0024880 (2006-02-01), Chui et al.
patent: 2006/0067650 (2006-03-01), Chui
patent: 2006/0113618 (2006-06-01), Reboa
patent: 2007/0041076 (2007-02-01), Zhong et al.
patent: 2007/0249079 (2007-10-01), Sasagawa et al.
patent: 2008/0003784 (2008-01-01), Pan
patent: 2008/0218843 (2008-09-01), Sasagawa et al.
patent: 2008/0311690 (2008-12-01), Tu et al.
patent: 2009/0002804 (2009-01-01), Natarajan et al.
patent: 680534 (1992-09-01), None
patent: 2 839 919 (2003-11-01), None
patent: 11-263012 (1999-09-01), None
patent: 2000-075223 (2000-03-01), None
patent: 2002-355800 (2002-12-01), None
patent: 2003-195189 (2003-07-01), None
patent: WO 03/031319 (2003-04-01), None
patent: WO 03/046508 (2003-06-01), None
patent: WO 04/000717 (2003-12-01), None
patent: WO 2005/124869 (2005-12-01), None
patent: WO 2007/060416 (2007-05-01), None
Maboudian, et al., Self-assembled monolayers as anti-stiction coatings for MEMS: characteristics and recent developments, Sensors and Actuators 82 (2000) 219-223.
Maboudian, et al. Critical Review: Adhesion in Surface Micromechanical Structures: J. Vac. Sci Techno. B 15(1) Jan./Feb. 1997, pp. 1-20.
Matsumoto et al., Novel prevention method of stiction using silicon anodization for SOI structure, Sensors and Actuators, 72:2(153-159) Jan. 19, 1999.
Tayebi et al. “Reducing the Effects of adhesion and friction in microelectomechanical systems (MEMS) through surface roughening: Comparison Between theory and experiments” http://jap.ajp.org/jap/copyright.isp Journal of applied Physics 98, 073528 (2005).
Xactix Xetch X# Specifications, http:—www.xactix.com-Xtech X3specs.htm, Jan. 5, 2005.
Xactix Xetch Product Information.
Boucinha M et al., “Amorphous silicon air-gap resonators on large -area substrates,” Applied Physics Letters, AIP, American Institute of Physics, Melville, NY., vo. 77, No. 6, Aug. 7, 2000, pp. 907-909.
Chen-Kuei Chung et al., “Fabrication and characterization of amorphous Si Films by PECVD for MEMS,” Journal of Micromechanics & Microengineering, Institute of Physics Publishing, Bristol, GB, vol. 15, No. 1, Jan. 1, 2005, pp. 136-142.
Ciprian Iliescu et al., “Thick and low-stress PECVD amorphous silicon for MEMS applications,” Journal of Micromechanics & Microengineering, Institute of Physics Publishing, Bristol, GB, vol. 18, No. 1, Jan. 1, 2008, p. 15024.
Yao T-J et al., “BrF3dry release technology for large freestanding parylene microstructures and electrostatic actuators,” Sensors and Actuators, A 97-98, Elsevier Science B.V. (2002) 771-775.
International Search Report issued on Jun. 30, 2010 in the corresponding PCT application No. PCT/US2009/046176.

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