Low temperature aluminum nitride

Details Low temperature aluminum nitride Low temperature aluminum nitride

1996-04-01

1999-03-02

Everhart, Caridad

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257750, 257765, 438688, 438661, H01L 21441

Patent

active

058775579

ABSTRACT:
A process for metallizing semiconductor devices is provided, wherein a plurality of aluminum contacts is formed. The plurality of aluminum contacts is at least partially nitrided in a nitrogen-containing plasma at a temperature of less than about 350.degree. C. The aluminum nitride layer or cap is capable of eliminating aluminum corrosion without affecting the electrical properties of the aluminum contacts.

REFERENCES:
patent: 5244535 (1993-09-01), Ohtsuka et al.
patent: 5270263 (1993-12-01), Kim et al.
patent: 5286676 (1994-02-01), Kruger et al.
patent: 5432128 (1995-07-01), Tsu
patent: 5525542 (1996-06-01), Manion et al.

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