Low TCE polyimides as improved insulator in multilayer interconn

Details Low TCE polyimides as improved insulator in multilayer interconn Low TCE polyimides as improved insulator in multilayer interconn

1997-04-10

1999-11-02

Simmons, David A.

Stock material or miscellaneous articles

All metal or with adjacent metals

Composite; i.e., plural, adjacent, spatially distinct metal...

428623, 428626, 428635, 428458, 4284735, 257 40, 257684, 257698, 257702, H01L 2912

Patent

active

059767103

ABSTRACT:
A multilevel high density interconnect structure of a semiconductor device or package including a substrate having at least one conductive feature therein, a film of a polyimide composition on the substrate and selected from the group consisting of a cured product of a polyamic acid and a cured product of a polyamic ester. The polyamic acid is prepared by reacting a stoichiometric excess of a linear aromatic diamine and aromatic dianhydride to form a first reaction product where the molar ratio of said diamine to said aromatic anhydride is in the range from 100:97 to 100:99.5 and then reacting the first reaction product with an aromatic anhydride. The polyamic ester is prepared by reacting a stoichiometric excess of a linear aromatic diamine and an aromatic diester diacyl chloride to form a second reaction product where the molar ratio of said diamine to said diester diacyl chloride is in the range from 100:97 to 100:99.5 and then reacting the second reaction product with aromatic anhydride. There is at least one interconnective conductive metallurgical feature in the film a polyimide composition in contact with said conductive feature in said substrate.

REFERENCES:
patent: 4690999 (1987-09-01), Numata et al.
patent: 4702792 (1987-10-01), Chow et al.
patent: 4789648 (1988-12-01), Chow et al.
patent: 4880684 (1989-11-01), Boss et al.
patent: 4954142 (1990-09-01), Carr et al.
patent: 5059273 (1991-10-01), Boyce et al.
patent: 5095359 (1992-03-01), Tanaka et al.
patent: 5106667 (1992-04-01), Ochsner et al.
patent: 5115090 (1992-05-01), Sachdev et al.
patent: 5171828 (1992-12-01), Meterko et al.
patent: 5260413 (1993-11-01), Ochsner et al.
patent: 5372891 (1994-12-01), Yu et al.
Y. Misawa, et al. IEEE Transactions on Electron Devices, vol. ED-34, No. 3, Mar. 1987.
Birt T. Merriman, et al., New Location Coefficient of Thermal Expansion Polyimide for Inorganic Substrates, pp. 155-159.

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