Low supply voltage and self-biased high speed receiver

Amplifiers – With semiconductor amplifying device – Including differential amplifier

Reexamination Certificate

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C330S261000

Reexamination Certificate

active

06924702

ABSTRACT:
A low supply voltage and self-biased high speed receiver comprising both thin and thick gate oxide MOSFETs in deep submicron technology. The receiver operates with an IO supply voltage higher than its core MOSFET operating voltage. The input signals are received by the thick gate oxide devices and the thin gate oxide devices are free from gate oxide stress, which eliminates the reliability problem. The current supplies formed by thin oxide devices provide a high supply current so that neither additional higher voltage supply nor low Vt IO device is needed, and the circuit area for the current supplies is reduced.

REFERENCES:
patent: 4958133 (1990-09-01), Bazes
patent: 5278467 (1994-01-01), Nedwek
patent: 6118318 (2000-09-01), Fifield et al.
patent: 6169424 (2001-01-01), Kurd
patent: 6469579 (2002-10-01), Bazes

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