Low subthreshold leakage current HFET

Details Low subthreshold leakage current HFET Low subthreshold leakage current HFET

1998-07-07

1999-04-20

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

257 24, 257192, 257194, 257195, H01L 310328, H01L 310336, H01L 31072, H01L 31109

Patent

active

058959297

ABSTRACT:
A low subthreshold leakage current, p-channel HFET including a GaAs supporting substrate with a first GaAs buffer layer and a first Al.sub.0.75 Ga.sub.0.25 As diffusion barrier layer formed thereon and a low temperature grown layer, including one of GaAs and AlGaAs, grown at 200.degree. C. on the first diffusion barrier layer. A second Al.sub.0.75 Ga.sub.0.25 As diffusion barrier layer is positioned on the low temperature grown layer and a second GaAs buffer layer is grown on the second diffusion barrier layer. A p-channel HFET is formed on the second buffer layer.

REFERENCES:
patent: 4774205 (1988-09-01), Choi et al.
patent: 5084743 (1992-01-01), Mishra et al.
patent: 5196358 (1993-03-01), Boos
patent: 5243207 (1993-09-01), Plumton et al.
patent: 5266506 (1993-11-01), Green, Jr.
patent: 5313083 (1994-05-01), Schindler
patent: 5646069 (1997-07-01), Jelloian et al.

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