Coating processes – Electrical product produced – Integrated circuit – printed circuit – or circuit board
Patent
1987-04-30
1988-06-14
Morgenstern, Norman
Coating processes
Electrical product produced
Integrated circuit, printed circuit, or circuit board
427124, 427253, 437228, 437245, 437187, 437173, B05D 306, B05D 512, C23C 1500
Patent
active
047511010
ABSTRACT:
A method is described for depositing thick, low-stress refractory metal films on a substrate. For example, a layer of tungsten of any required thickness may be deposited by the silicon reduction of tungsten hexafluoride in a CVD reactor. This is accomplished by alternating the process step of plasma depositing an amorphous silicon film, with the process step of exposing the silicon film to tungsten hexafluoride until the required thickness of tungsten is reached. The thickness of the deposited amorphous silicon film must be less than the thickness at which the replacement of silicon to tungsten becomes self-limiting to assure that all of the amorphous silicon is replaced. The bombardment of the silicon during plasma deposition "hammers" the underlying tungsten film and relieves the stress in the film.
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Burke Margaret
International Business Machines - Corporation
Kilgannon T. J.
Klitzman Maurice H.
LaBaw Jeffrey S.
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