Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Patent
1996-03-01
1998-11-24
Tran, Minh-Loan
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
257292, 257461, H01L 27148
Patent
active
058411585
ABSTRACT:
The stress placed on the silicon lattice of a photodiode during the formation of field oxide regions by the local oxidation of silicon (LOCOS) is eliminated in the present invention by utilizing a negatively-charged layer of polysilicon to isolate the implanted n-type region of the photodiode from the implanted regions of adjacent photodiodes or other devices. In addition, stress is further reduced in the present invention by forming the n-type region of the photodiode with phosphorous, and by lowering the dose such that the n-type region is lightly doped.
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Foveonics, Inc.
Tran Minh-Loan
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