Metal fusion bonding – Process – Metal to nonmetal with separate metallic filler
Patent
1987-02-06
1988-07-19
Jordan, M.
Metal fusion bonding
Process
Metal to nonmetal with separate metallic filler
228261, 22826312, 357 67, 357 71, 357 81, 427123, 427423, B23K 3102, B23K 3536
Patent
active
047579340
ABSTRACT:
A semiconductor die is mounted on a metal substrate via intermediate layers which permit the die to be readily soldered to the combination while yet reducing thermal stresses. A dielectric layer is formed over the substrate, followed by another layer of a selected metal, either molybdenum or tungsten. Atop the metal layer is another layer comprising a mixture of solder and the selected metal. A layer of only solder is formed over the mixture, and the semiconductor die is bonded thereto by means of the layer of solder.
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Heinrich Samuel M.
Jordan M.
Moore John H.
Motorola Inc.
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