Low selectivity chemical mechanical polishing (CMP) process for

Details Low selectivity chemical mechanical polishing (CMP) process for Low selectivity chemical mechanical polishing (CMP) process for

1997-08-04

2000-04-04

Rose, Robert A.

Abrading

Abrading process

Glass or stone abrading

438692, 216 88, B24B 100

Patent

active

060454350

ABSTRACT:
A method for polishing a metal layer (20) containing a combination of wide features (12), low density features (14), and high density features (18), is illustrated. A hydrophilic polish pad (24) having a shore D hardness of greater than 50 is used along with slurry (22) containing silica and an acidic based oxidizer such as oxadic acid in a chemical mechanical polishing (CMP) process. The result is less than 5:1 and preferably 1:1. This low selectivity results in the metal layer (20) being polished to a level below the surface of the surrounding oxide in a timed-controlled polish.

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