Low reverse junction breakdown voltage zener diode for electrost

Details Low reverse junction breakdown voltage zener diode for electrost Low reverse junction breakdown voltage zener diode for electrost

1992-06-16

1994-01-04

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Avalanche diode

257106, 257355, 257604, 257605, H01L 2990, H01L 2988, H01L 2362, H01L 31107

Patent

active

052763501

ABSTRACT:
A zener diode with a low reverse breakdown avalanche voltage and the use of zener diode in electrostatic discharge protection circuit is described herein. The low breakdown avalanche voltage is achieved by creating a zener diode with a lightly doped region between the P+ and N+ zones. Zener diode disclosed herein is particularly useful in protection circuits for integrated circuits having features or sizes of one micron or less.

REFERENCES:
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patent: 4079402 (1978-03-01), Dunkley et al.
patent: 4224631 (1980-09-01), Vickery et al.
patent: 4757363 (1988-07-01), Bohm et al.
patent: 4872039 (1989-10-01), Stabile
patent: 4984031 (1991-01-01), Rinderle
patent: 4999683 (1991-03-01), Kiyomura et al.
patent: 5021840 (1991-06-01), Morris
patent: 5027181 (1991-06-01), Larik et al.
Semiconductor Devices--Physics and Technology, 1985 by S. M. Sze, p. 38, FIG. 7.

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