Compositions: ceramic – Ceramic compositions – Carbide or oxycarbide containing
Reexamination Certificate
2006-03-28
2006-03-28
Group, Karl (Department: 1755)
Compositions: ceramic
Ceramic compositions
Carbide or oxycarbide containing
C501S092000, C252S516000
Reexamination Certificate
active
07018947
ABSTRACT:
Free standing articles of chemical vapor deposited silicon carbide with electrical resistivities of less than 0.9 ohm-cm are provided without substantially degrading its thermal conductivity or other properties.
REFERENCES:
patent: 4772498 (1988-09-01), Bertin et al.
patent: 5071596 (1991-12-01), Goela et al.
patent: 5093039 (1992-03-01), Kijima et al.
patent: 5332601 (1994-07-01), Varacalle, Jr. et al.
patent: 5354580 (1994-10-01), Goela et al.
patent: 5374412 (1994-12-01), Pickering et al.
patent: 5604151 (1997-02-01), Goela et al.
patent: 5612132 (1997-03-01), Goela et al.
patent: 5683028 (1997-11-01), Goela et al.
patent: 5993770 (1999-11-01), Kuroyanagi et al.
patent: 6001756 (1999-12-01), Takahashi et al.
patent: 6090733 (2000-07-01), Otsuki et al.
patent: 6187704 (2001-02-01), Takahashi et al.
patent: 6214755 (2001-04-01), Otsuki et al.
patent: 2002/0037801 (2002-03-01), Sugihara et al.
patent: 0 582 444 (1994-02-01), None
patent: 1178132 (2002-06-01), None
patent: 2001-220237 (2001-08-01), None
Matsunami et al., “Step-controlled epitaxy of SiC: high-quality homoepitaxial growth”, Diamond and Related Materials 7 (1998) 342-347.
Northern Lights Optics, optical design got amateur telescope makers, http://www.minerals.sk.ca/atm—carbide.html; Aug. 16, 2004.
Rost et al.; “Growth related distribution of secondary phase inclusions in 6H-SiC single crystals”; Journal of Crystal Growth 225 (2001) pp. 317-321.
Wellman et al.; “Impact of source material on silicon carbide vapor transport growth process”; Journal of Crystal Growth 225 (2001); pp. 312-316.
Nima Ghalichechian; “Silicon Carbide Overview of Physical Properties and Thin Film Deposition”; ENEE793, Solid State Electronics; University of Maryland; Fall 2002; pp. 1-22.
Goela Jitendra S.
Pickering Michael A.
Group Karl
Piskorski John J.
Shipley Company L.L.C.
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