Low resistivity silicon carbide

Details Low resistivity silicon carbide Low resistivity silicon carbide

2011-04-19

2011-04-19

Thomas, Tom (Department: 2893)

Semiconductor device manufacturing: process

Having diamond semiconductor component

Reexamination Certificate

active

07927915

ABSTRACT:
An opaque, low resistivity silicon carbide and a method of making the opaque, low resistivity silicon carbide. The opaque, low resistivity silicon carbide is doped with a sufficient amount of nitrogen to provide the desired properties of the silicon carbide. The opaque, low resistivity silicon carbide is a free-standing bulk material that may be machined to form furniture used for holding semi-conductor wafers during processing of the wafers. The opaque, low resistivity silicon carbide is opaque at wavelengths of light where semi-conductor wafers are processed. Such opaqueness provides for improved semi-conductor wafer manufacturing. Edge rings fashioned from the opaque, low resistivity silicon carbide can be employed in RTP chambers.

REFERENCES:
patent: 4772498 (1988-09-01), Bertin et al.
patent: 5071596 (1991-12-01), Goela et al.
patent: 5332601 (1994-07-01), Varacalle et al.
patent: 5354580 (1994-10-01), Goela et al.
patent: 5374412 (1994-12-01), Pickering et al.
patent: 5465184 (1995-11-01), Bertin et al.
patent: 5474613 (1995-12-01), Pickering et al.
patent: 5612132 (1997-03-01), Goela et al.
patent: 5683028 (1997-11-01), Goela et al.
patent: 6048403 (2000-04-01), Deaton et al.
patent: 6090733 (2000-07-01), Otsuki et al.
patent: 6200388 (2001-03-01), Jennings
patent: 6214755 (2001-04-01), Otsuki et al.
patent: 6334335 (2002-01-01), Hirota et al.
patent: 6537733 (2003-03-01), Campana et al.
patent: 2002/0004444 (2002-01-01), Goela et al.
patent: 2002/0106535 (2002-08-01), Brese et al.
patent: 2003/0045098 (2003-03-01), Verhaverbeke et al.
patent: 2003/0059568 (2003-03-01), Pickering et al.
patent: 0 582 444 (1994-02-01), None
patent: 2000119064 (2000-04-01), None
Matsunami et al., “Step-controlled epitaxy of SiC: high-quality homoepitaxial growth”, Diamond and Related Materials 7; pp. 342-347 (1988).
Swarnima et al., “Microstructural Evolution in Liquid-Phase-Sintered SiC: Part II, Effects of Planar Defects and Seeds in the Starting Powder”; J. Am. Ceram. Soc. 84(7) pp. 1585-1590 (2001).
Bolch et al., “Silicon Carbide Makes Superior Mirrors”; Laser Focus World; pp. 97-105 (Aug. 1989).
Shih et al., “The Application of Hot Pressed Silicon Carbide to Large High-Precision Optical Structures”; SPIE vol. 2543; pp. 24-37 (1995).
Goela et al., “High Thermal Conductivity SiC and Applications” pp. 1-38.

Affiliated with

Also associated with

Rating

Low resistivity silicon carbide does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Low resistivity silicon carbide, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Low resistivity silicon carbide will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2694197