Low resistivity semiconductor barrier layers and manufacturing m

Details Low resistivity semiconductor barrier layers and manufacturing m Low resistivity semiconductor barrier layers and manufacturing m

1998-10-05

2000-11-07

Picard, Leo P.

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257753, 257773, 257761, 257737, H01L 2448

Patent

active

061440965

ABSTRACT:
A semiconductor, and manufacturing method therefor, is provided with a barrier/adhesion layer, having cobalt, nickel, or palladium for semiconductors having conductive materials of copper, silver or gold. The barrier/adhesion layer can be alloyed with between about 0.2% and 4% tantalum, molybdenum, or tungsten to increase barrier effectiveness and lower resistivity.

REFERENCES:
patent: 5094981 (1992-03-01), Chung et al.
patent: 5134460 (1992-07-01), Brady et al.
patent: 5623166 (1997-04-01), Olowolafe et al.
patent: 5695810 (1997-12-01), Dubin et al.
patent: 5858868 (1999-01-01), Hirade

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