Low-resistivity polycrystalline silicon film

Details Low-resistivity polycrystalline silicon film Low-resistivity polycrystalline silicon film

1979-08-10

1980-10-21

Newsome, John H.

Stock material or miscellaneous articles

Composite

Of silicon containing

204DIG11, 219121L, 427 82, 427 85, 427 86, 427 531, 428538, B05D 306

Patent

active

042295025

ABSTRACT:
A method of fabricating a low-resistivity polycrystalline silicon film deposited on a substrate comprises the steps of doping the polycrystalline silicon film with boron in situ while depositing the film, to a concentration greater than 1.times.10.sup.20 atoms/cm.sup.3, and then irradiating the film with a laser pulse. The present method may be utilized to fabricate a polycrystalline silicon film having a relatively small temperature coefficient of resistivity by electrically connecting a first irradiated part of the film with a second non-irradiated part in a manner allowing the two parts, having different temperature coefficients of resistivity, to compensate each other.

REFERENCES:
patent: 4059461 (1977-11-01), Fan et al.
patent: 4151058 (1979-04-01), Kaplan et al.
patent: 4164436 (1979-08-01), Ura et al.
Chiang, "Semiconductor Silicon" 1973, pp. 285-291.
Chapman et al., "J. App. Phys." vol. 34, No. 11, Nov. 1963, pp. 3291-3295.

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