Low resistivity ohmic contacts for compound semiconductor device

Details Low resistivity ohmic contacts for compound semiconductor device Low resistivity ohmic contacts for compound semiconductor device

1978-03-14

1980-09-16

James, Andrew J.

357 65, 357 68, 357 88, 357 89, 357 90, H01L 29167, H01L 29207, H01L 29227

Patent

active

042233364

ABSTRACT:
Ohmic contacts having reduced resistivity and enhanced current-carrying capability are fabricated in compound semiconductor devices by substantially saturating the compound semiconductor with two different impurities of the same conductivity type, the different impurities being respectively suitable for occupying the two different types of impurity sites available in the compound semiconductor. The result is a sufficient increase in available carriers that conductivity takes place primarily through field emission tunneling and is enhanced to a degree wholly disproportionate to the increase in the number of available carriers.

REFERENCES:
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patent: 3836999 (1974-09-01), Nishizawa
patent: 3863334 (1975-02-01), Coleman
patent: 3941624 (1976-03-01), Cho
patent: 3959036 (1976-05-01), Ketchow
patent: 4008485 (1977-02-01), Miyoshi et al.
patent: 4024569 (1977-05-01), Hawryle et al.
patent: 4131904 (1978-12-01), Ladany et al.

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