Low resistive tantalum thin film structure and method for formin

Details Low resistive tantalum thin film structure and method for formin Low resistive tantalum thin film structure and method for formin

1998-10-26

2000-08-29

Speer, Timothy M.

Stock material or miscellaneous articles

Composite

Of metal

428698, 428700, B32B 900

Patent

active

061105988

ABSTRACT:
A method for forming a lamination structure of a tantalum nitride film and a tantalum thin film free of nitrogen overlying the tantalum nitride film, which have reduced resistivities, wherein a gas pressure during sputtering for growing the tantalum nitride film is limited to a predetermined value not more than about 0.5 pa so that the tantalum nitride film has a hexagonal crystal structure and the tantalum thin film free of nitrogen has a BCC structure with lattice spacing close to that of the tantalum nitride film hexagonal crystal structure.

REFERENCES:
patent: 3663408 (1972-05-01), Kumagai et al.
patent: 3793175 (1974-02-01), Joly et al.
patent: 4364099 (1982-12-01), Koyama et al.
patent: 5221449 (1993-06-01), Colgan et al.
patent: 5281554 (1994-01-01), Shimada et al.

Affiliated with

Also associated with

Rating

Low resistive tantalum thin film structure and method for formin does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Low resistive tantalum thin film structure and method for formin, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Low resistive tantalum thin film structure and method for formin will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1247749