Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Magnetic field
Reexamination Certificate
2007-05-29
2009-10-13
Ngo, Ngan (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Magnetic field
C257SE29167, C365S158000, C365S171000, C365S173000
Reexamination Certificate
active
07602033
ABSTRACT:
A high performance TMR sensor is fabricated by employing a composite inner pinned (AP1) layer in an AP2/Ru/AP1pinned layer configuration. In one embodiment, there is a 10 to 80 Angstrom thick lower CoFeB or CoFeB alloy layer on the Ru coupling layer, a and 5 to 50 Angstrom thick Fe or Fe alloy layer on the CoFeB or CoFeB alloy, and a 5 to 30 Angstrom thick Co or Co rich alloy layer formed on the Fe or Fe alloy. A MR ratio of about 48% with a RA of <2 ohm-um2is achieved when a CoFe AP2layer, MgO (NOX) tunnel barrier, and CoFe/NiFe free layer are used in the TMR stack. Improved RA uniformity and less head noise are observed. Optionally, a CoFe layer may be inserted between the coupling layer and CoFeB or CoFeB alloy layer to improve pinning strength and enhance crystallization.
REFERENCES:
patent: 6493196 (2002-12-01), Noma et al.
patent: 6995960 (2006-02-01), Seyama et al.
patent: 7161774 (2007-01-01), Hayashi et al.
patent: 7163755 (2007-01-01), Hiramoto et al.
patent: 2004/0041183 (2004-03-01), Slaughter et al.
patent: 2004/0101978 (2004-05-01), Linn et al.
patent: 2005/0118458 (2005-06-01), Slaughter et al.
patent: 2006/0262594 (2006-11-01), Fukumoto
patent: 2006/0267056 (2006-11-01), Ju et al.
patent: 2007/0015293 (2007-01-01), Wang et al.
patent: 2007/0047159 (2007-03-01), Zhao et al.
patent: 2007/0063236 (2007-03-01), Huai et al.
patent: 2007/0063237 (2007-03-01), Huai et al.
patent: 2007/0171694 (2007-07-01), Huai et al.
patent: 2008/0061388 (2008-03-01), Diao et al.
patent: 2008/0182015 (2008-07-01), Parkin
patent: 2008/0239589 (2008-10-01), Guo et al.
patent: 2009/0002898 (2009-01-01), Childress et al.
patent: 2009/0003043 (2009-01-01), Hung et al.
Co-pending U.S. Appl. No. 11/181,176, filed Jul. 14, 2005, “TMR Device with Surfactant Layer on Top of CoFexBy/CoFez Inner Pinned Layer”, assigned to the same assignees as the present invention.
Co-pending U.S. Appl. No. 11/280,523, filed Nov. 16, 2005, “Low Resistance Tunneling Magnetoresistive Sensor with Natural Oxidized Double Mg Barrier”, assigned to the same assignees as the present invention.
“Giant room-temperature magnetoresistance in single-crystal Fe/Mgo/Fe magnetic tunnel junctions”; by Shinji Yuasa et al., Letters, Nature Materials, vol. 3, Dec. 2004, online: www.nature.com
aturematerials. 2004 Nature Publishing Group, pp. 868-871.
“Giant tunnelling magnetoresistance at room temperature with MgO(100) tunnel barriers”, by Stuart S.P. Parkin et al., nature materials/vol. 3/Dec. 2004, 2004 Nature Publishing Group, online: www.nature.com
aturematerials, pp. 862-867.
“Giant tunneling magnetoresistance up to 410%. at room temperature in fully epitaxial Co/MgO/Co magnetic tunnel junctions with bcc Co(001) electrodes”, by Shinji Yuasa et al., Applied Physics Letters 89,042505-1 to -3, 2006.
“230% room-temperature magnetoresistance in CoFeB/MgO/CoFeB magnetic tunnel junctions”, by Djayaprawira et al., Applied Physics Letters 86, 092502-1 to -3, 2005.
“Giant tunneling magnetoresistance effect in low-resistance CoFeB/MgO (001)/CoFeB magnetic tunnel junctions for read-head applicatins”, by Tsunekawa et al., Appl. Physics Letters 87, 072503-1 to -3, 2005.
“Ultra low-resistance-area product of 0.4 52(μm)2and high magnetoresistance above 50% in CoFeB/MgO/CoFeB magnetic tunnel junctions”, by Nagamine et al., Appl. Physics Letters 89, 1625017-1 to -3, 2006.
Chen Yu-Hsia
Li Min
Wang Hui-Chuan
Zhang Kunliang
Zhao Tong
Ackerman Stephen B.
Headway Technologies Inc.
Ngo Ngan
Saile Ackerman LLC
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