Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Magnetic field
Reexamination Certificate
2011-08-30
2011-08-30
Ngo, Ngan (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Magnetic field
C257SE29167, C365S158000, C365S171000, C365S173000
Reexamination Certificate
active
08008740
ABSTRACT:
A high performance TMR sensor is fabricated by employing a composite inner pinned (AP1) layer in an AP2/Ru/AP1 pinned layer configuration. In one embodiment, there is a 10 to 80 Angstrom thick lower CoFeB or CoFeB alloy layer on the Ru coupling layer, a and 5 to 50 Angstrom thick Fe or Fe alloy layer on the CoFeB or CoFeB alloy, and a 5 to 30 Angstrom thick Co or Co rich alloy layer formed on the Fe or Fe alloy. A MR ratio of about 48% with a RA of <2 ohm-um2is achieved when a CoFe AP2 layer, MgO (NOX) tunnel barrier, and CoFe/NiFe free layer are used in the TMR stack. Improved RA uniformity and less head noise are observed. Optionally, a CoFe layer may be inserted between the coupling layer and CoFeB or CoFeB alloy layer to improve pinning strength and enhance crystallization.
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Chen Yu-Hsia
Li Min
Wang Hui-Chuan
Zhang Kunliang
Zhao Tong
Ackerman Stephen B.
Headway Technologies Inc.
Ngo Ngan
Saile Ackerman LLC
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