Low resistance tunnel

Details Low resistance tunnel Low resistance tunnel

1986-03-17

1987-12-08

Edlow, Martin H.

357 59, 357 68, H01L 2946, H01L 2350, H01L 2904, H01L 2944

Patent

active

047121262

ABSTRACT:
A low resistance silicon conductor for tunnelling under an intervening metal conductor on a semiconductor device is provided. The low resistance conductor includes two layers of highly doped single crystalline or polycrystalline silicon which are stacked so that one is directly over the other. A pair of metal conductors are arranged, one on each side of the intervening metal conductor. Each of the pair of metal conductors is formed in ohmic contact with a portion of each of the two layers of silicon near one of their adjacent edges, thereby forming a two layer conductive tunnel under the intervening metal conductor.

REFERENCES:
patent: 3964092 (1976-06-01), Wadham
patent: 4072977 (1978-02-01), Bate et al.
patent: 4278989 (1981-07-01), Baba et al.

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