Low resistance probe for semiconductor

Details Low resistance probe for semiconductor Low resistance probe for semiconductor

1991-08-02

1993-01-05

Nguyen, Vinh

Electricity: measuring and testing

Measuring, testing, or sensing electricity, per se

With rotor

324158F, 324 725, G01R 100, G01R 104

Patent

active

051774380

ABSTRACT:
A probe (10) that can be used for forming a low resistance electrical connection to a semiconductor die includes a contact (18) that is created on a compliant layer (12) which is supported by a substrate (11). Pressure applied to the contact (18) compresses the compliant layer (11) which causes a distal end of the contact (18) to move in a motion that is substantially equal to an arc. As the contact (18) moves through the arc motion, it scrubs across a bonding pad of a semiconductor die and breaks through oxide that typically forms on the bonding pad thereby forming a low resistance electrical connection to the bonding pad.

REFERENCES:
patent: 4571542 (1986-02-01), Arai
patent: 4820976 (1989-04-01), Brown
patent: 4849689 (1989-07-01), Gleason et al.
patent: 5090118 (1992-02-01), Kwon et al.
patent: 5128612 (1992-07-01), Aton et al.

Affiliated with

Also associated with

Rating

Low resistance probe for semiconductor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Low resistance probe for semiconductor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Low resistance probe for semiconductor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2393216