Low resistance metal contact for silicon devices

Details Low resistance metal contact for silicon devices Low resistance metal contact for silicon devices

1986-05-02

1989-01-03

James, Andrew J.

Fishing, trapping, and vermin destroying

437189, 437194, 357 51, 357 59, H01L 2348

Patent

active

047960817

ABSTRACT:
A three-layer metal contact including aluminum is provided for silicon-based semiconductor devices to minimize the effects of formation of silicon precipitates in the aluminum layer and low contact junction leakage. The metal contact comprises a first layer of a refractory metal silicide formed on a silicon surface, an intermediate layer of aluminum formed on the refractory metal silicide and a top layer of a refractory metal silicide formed on the layer of aluminum. Where contact is made to polysilicon layers forming high resistance load resistors, the metal contact of the invention prevents reduction in resistance resulting from the interdiffusion of silicon and aluminum.

REFERENCES:
patent: 4333099 (1982-06-01), Tanguay
patent: 4531144 (1985-07-01), Holmberg
patent: 4648175 (1987-03-01), Metz
IBM Technical Disclosure Bulletin, vol. 10 #11, Apr. 1968, p. 1709, by Lloyd.
IBM Technical Disclosure Bulletin, vol. 20 #9, Feb., 1979, pp. 3480-3483, by Reith.

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