Low resistance magnetic tunnel junction structure

Details Low resistance magnetic tunnel junction structure Low resistance magnetic tunnel junction structure

2006-02-21

2006-02-21

Bernatz, Kevin M. (Department: 1773)

Stock material or miscellaneous articles

Magnetic recording component or stock

Magnetic head

C428S811500, C428S812000, C360S324200

Reexamination Certificate

active

07001680

ABSTRACT:
The present disclosure describes magnetic tunnel junction (MTJ) devices and systems involving the use of diffusion components selected to alter the device properties. The diffusion components migrate from one layer of the MTJ structure to the tunneling barrier layer. Incorporation of the migrated components at the barrier layer adjusts the properties of the MTJ device.

REFERENCES:
patent: 5640343 (1997-06-01), Gallagher et al.
patent: 5712612 (1998-01-01), Lee et al.
patent: 6097579 (2000-08-01), Gill
patent: 6449133 (2002-09-01), Makino et al.
patent: 2003/0017723 (2003-01-01), Hiramoto et al.
patent: 2004/0027733 (2004-02-01), Matsukawa et al.
patent: 2004/0041183 (2004-03-01), Slaughter
patent: 2004/0240123 (2004-12-01), Amano et al.

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