Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – With large area flexible electrodes in press contact with...
Patent
1997-07-28
1999-04-27
Loke, Steven H.
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
With large area flexible electrodes in press contact with...
257343, H01L 2976, H01L 2994
Patent
active
058982019
ABSTRACT:
A metal oxide semiconductor field effect transistor power device with a lightly doped silicon substrate includes a source region and a drain region. At least one field implanted island region is formed along the surface of the substrate between the source and drain regions with a field oxide region formed above the field implanted region, a dielectric layer and a gate electrode formed over the substrate, and self-aligned source and drain regions implanted into the device with external electrodes connected thereto.
REFERENCES:
patent: 5019522 (1991-05-01), Meyer et al.
patent: 5258641 (1993-11-01), Kida et al.
patent: 5322804 (1994-06-01), Beasom
Hsu Ching-Hsiang
Kuo Ta-Chi
Lu Su
Yeh Nai Jen
Loke Steven H.
United Microelectronics Corporation
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