Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Patent
1997-03-11
1998-04-28
Tran, Minh-Loan
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
257755, 257758, 257770, H01L 2348
Patent
active
057448663
ABSTRACT:
There is provided a method of fabricating a semiconductor device, including the steps of (a) forming a first insulating film on a semiconductor substrate, (b) forming gate electrodes on the first insulating film, the gate electrodes having a two-layered structure including a first conductive film and a second insulating film lying over the first conductive film, (c) forming a diffusion layer around the gate electrodes, (d) forming an insulating sidewall film around a sidewall of the gate electrodes, (e) covering a resultant with a third insulating film, (f) forming a contact hole between the gate electrodes in self-aligning fashion, (g) covering a resultant with a second conductive film, (h) covering a resultant with a fourth insulating film, (i) planarizing the fourth insulating film, (j) isotropically etching the planarized fourth insulating film to make a part of the second conductive film to appear, (k) covering a resultant with a third conductive film, and (l) etching the third conductive film, the fourth insulating film and the second conductive film in a selective area to form a ground wiring layer. The above mentioned method makes it possible to form a contact hole in self-aligning fashion and further to form a low resistance ground wiring.
REFERENCES:
patent: 5414302 (1995-05-01), Shin et al.
NEC Corporation
Tran Minh-Loan
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