Low resistance gallium arsenide field effect transistor

Details Low resistance gallium arsenide field effect transistor Low resistance gallium arsenide field effect transistor

1985-06-26

1987-03-17

Larkins, William D.

357 15, 357 55, H01L 2980

Patent

active

046511792

ABSTRACT:
A method of producing a high frequency III-V FET and the resultant structure is described wherein a doped layer is formed on a wafer of undoped, semi-insulating III-V material. The structure is then etched to form a mesa after which, a channel region is regrown from an exposed portion of the III-V substrate. The formation of the channel region defines the source and drain regions. Ohmic contacts are then made to the source and drain regions after which a Schottky contact is made to the channel region.

REFERENCES:
patent: 3375417 (1968-03-01), Hull et al.
patent: 3764865 (1973-10-01), Napoli et al.
patent: 3804681 (1974-04-01), Drangeid et al.
patent: 3906541 (1975-09-01), Goronkin
patent: 4075652 (1978-02-01), Umebachi et al.
patent: 4111725 (1978-09-01), Cho et al.
patent: 4186410 (1980-01-01), Cho et al.
patent: 4265934 (1981-05-01), Ladd, Jr.
patent: 4266333 (1981-05-01), Reichert
patent: 4377899 (1983-03-01), Otani et al.
patent: 4426767 (1986-01-01), Swanson et al.
patent: 4429452 (1984-02-01), Meignant
Fukuta et al., "Power GaAs MESFET with a High Drain-Source Breakdown Voltage", IEEE Trans. Microwave Theory+Techniques, vol. MTT-24, No. 6, Jun. 1976, pp. 312-317.
Von Muench, "Producing Semiconductor Devices by Oriented Lateral Overgrowth", IBM Tech. Discl. Bull., vol. 10, No. 10, Mar. 1968, pp. 1469-1470.
Bozler et al., "Single-Crystal GaAs Films on Amorphous Substrates by the CLEFT Process", J. Vac. Sci. Technol., vol. 20, No. 3, 3/1982.
Tietjen et al., "Vapor Phase Growth of Several III-V Compound Semiconductors", Solid State Technology, Oct. 1972, pp. 42-49.

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